8 inch EPI Top Ring

Semicorex 8 inch EPI Top Ring is a specialized component of epitaxial (EPI) deposition systems providing high performance as the top cover ring on the reaction chamber. With a focus on structural integrity and thermal stability during epitaxial growth of semiconductor wafers, the EPI Top Ring is made of high-purity graphite and coated with silicon carbide (SiC) to withstand the temperature and chemically reactive environments of semiconductor manufacturing.

In epitaxial reactors, the top ring helps to retain the wafer environment and plays an important role in temperature uniformity and gas flow during deposition as part of the susceptor assembly. The SiC coating on the graphite substrate provides the EPI Top Ring with the thermal stability and inert environment required to protect the graphite core due to exposure to the processes gases during the performance of the EPI Top Ring ( hydrogen, silane, clorosilanes, etc.). The hardness and conductivity of the SiC layer enhances the performance of the EPI Top Ring by preventing degradation and allowing for more stable layers throughout the production cycle.

With a commitment to dimensional accuracy, coating consistency, and repeatability, the 8 inch EPI Top Ring is manufactured with precision engineering. The graphite substrate is machined to tight tolerances and thermally purified to segregate impurities, delivering a clean substrate with excellent purity and strength. The SiC coating is applied through chemical vapor deposition (CVD), to form a dense, consistent, and strongly bonded protective layer. This process minimizes particle generation and allows the coating to maintain surface integrity during extended use.

Semiconductor manufacturers rely on EPI Top Ring to maintain critical chamber parameters and support defect-free wafers during production. The configuration is designed for use with leading OEM 8-inch wafer processing systems. Custom options are available for thickness, surface finish, and grooved designs for better thermal management or even gas distribution.

Conforming the properties of the SiC coated graphite for this application takes combination the best of properties from both materials; graphite is very machinable and has thermal shock resistance combined with silicon carbide which is harder, corrosion resistant, and has longer service life. This combination ultimately gives you an EPI Top Ring that is reliable at high temperature, and guarantees a clean and stable processing environment that reduces maintenance intervals, and provides overall enhanced equipment uptime.

Graphite components play an indispensable and crucial role in semiconductor manufacturing. The quality of the graphite material significantly impacts the quality of the finished product. Our graphite batch consistency and material homogeneity are controlled and guaranteed throughout the production process.

1.Small-batch production, using a small carbonization furnace with a capacity of only 50 cubic meters.

2. Each piece of material is monitored and tracked.

3.Temperature monitoring at multiple points within the furnace ensures minimal temperature differences.

4.Temperature monitoring at multiple points on the material ensures minimal temperature differences.

The 8-inch EPI Top Ring by Semicorex offers exceptional performance, batch-to-batch consistency, and proven reliability in the most difficult semiconductors silicon, silicon carbide or other compound semiconductor epitaxy processes. On every manufacturing step, we produce products with quality control, which means every product purchased for the semiconductor industry exceeds quality specifications.

Select Semicorex's 8 inch EPI Top Ring for your epitaxy application to take advantage of possibilities offered through precision engineering, superior materials, and application-specific customization for improving yields and device performance.