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We thinks what clients think, the urgency of urgency to act from the interests of a purchaser position of principle, allowing for greater top quality, decrease processing costs, price ranges are much more reasonable, won the new and aged prospects the support and affirmation for RBSiC,SiC burner nozzle for industrial kilns,high-temperature kilns,SiC ceramic,Silicon carbide, We goal at Ongoing system innovation, management innovation, elite innovation and sector innovation, give full play for the overall advantages, and constantly make improvements to support excellent.
RBSiC, Our business activities and processes are engineered to make sure our customers have access to widest range of products with the shortest supply time lines. This achievement is made possible by our highly skilled and experienced team. We look for people who want to grow with us around the globe and stand out from the crowd. We now have people who embrace tomorrow, have vision, love stretching their minds and going far beyond what they thought was achievable.

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    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • CVD Epitaxial Deposition In Barrel Reactor

    CVD Epitaxial Deposition In Barrel Reactor

    Semicorex CVD Epitaxial Deposition In Barrel Reactor is a highly durable and reliable product for growing epixial layers on wafer chips. Its high-temperature oxidation resistance and high purity make it suitable for use in the semiconductor industry. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for high-quality epixial layer growth.
  • SiC MOCVD Inner Segment

    SiC MOCVD Inner Segment

    Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
  • 8-inch Waferholder Rings

    8-inch Waferholder Rings

    Semicorex 8-inch Waferholder Rings are designed to provide precise wafer fixation and exceptional performance in aggressive thermal and chemical environments. Semicorex delivers application-specific engineering, tight dimensional control, and consistent SiC coating quality to meet the rigorous demands of advanced semiconductor processing.*
  • SiC Fingers

    SiC Fingers

    Semicorex SiC Fingers are precision-engineered components made from high-purity silicon carbide, designed to perform under the extreme demands of semiconductor manufacturing. Choosing Semicorex means access to advanced material expertise, high-precision processing, and reliable solutions trusted in critical wafer handling applications.*
  • 1x2

    1x2" Graphite Wafer Susceptors

    Semicorex 1x2" graphite wafer susceptors are the high-performing carrying components specially engineered for 2-inch wafers, which are well-suited for the epitaxial process of semiconductor wafers. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding epitaxial growth environments.
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  • Understanding Dry Etching Technology in the Semiconductor Industry

    Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

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    As a leading upstream graphite material manufacturer in the semiconductor industry, Semicorex prioritizes the availability, usability, and durability of its materials, setting the standard for excellence in the field.

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    In high-performance automotive engineering, shifting from traditional cast iron to carbon ceramic brakes marks a significant advancement. Semicorex GT Version of carbon ceramic brakes employs advanced materials to push the limits of stopping power and handling.

  • How Important are Silicon Carbide Wafer Boats?

    In semiconductor manufacturing, besides core process equipment such as photolithography and etching, another type of fundamental component plays a crucial role in process stability: the wafer boat.

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