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  • Silicon Carbide Chuck

    Silicon Carbide Chuck

    Semicorex Silicon Carbide Chuck is a highly specialized component used in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Epitaxy

    SiC Epitaxy

    Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Ring

    TaC Coated Ring

    Semicorex TaC Coated Ring stands as a critical component that meets these demanding requirements. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Durable SiC-Coated Barrel Susceptor

    Durable SiC-Coated Barrel Susceptor

    With its excellent density and thermal conductivity, the Semicorex Durable SiC-Coated Barrel Susceptor is the ideal choice for use in epitaxial processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection and heat distribution properties, making it the go-to choice for reliable and consistent results.
  • Graphite Heating Industrial Element

    Graphite Heating Industrial Element

    Semicorex graphite heating industrial element is one of the most important parts of high-temperature vacuum sintering furnaces. It's essential for a variety of thermal processes due to their sophisticated material qualities.
  • SiC Coated Wafer Susceptors

    SiC Coated Wafer Susceptors

    Semicorex SiC Coated Wafer Susceptors are high-performance carrier designed specifically for ultrathin film deposition under pressureless conditions. With advanced materials engineering, precision porosity control, and robust SiC coating technology, Semicorex delivers industry-leading reliability and customization to meet the evolving needs of next-generation semiconductor manufacturing.*
  • Related Blog
  • Reviews

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • What is Semiconductor Ion Implantation Technology?

    In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • LPE is the important method for preparing P-type 4H-SiC single crystal and 3C-SiC single crystal

    As a third-generation wide bandgap semiconductor material, SiC (silicon carbide) has excellent physical and electrical properties, which makes it have broad application prospects in the field of power semiconductor devices.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

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