Semicorex 1x2" graphite wafer susceptors are the high-performing carrying components specially engineered for 2-inch wafers, which are well-suited for the epitaxial process of semiconductor wafers. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding epitaxial growth environments.
In the semiconductor wafer fabrication, the epitaxial layer is required to be grown on the wafer substrate for the subsequent fabrication of semiconductor devices. Since the epitaxial growth process is highly sensitive to temperature fluctuations and contamination, the selections of reliable wafer susceptors are critically important. As the indispensable supporting parts in wafer epitaxial process, the machining precision, thermal management capability, and contamination resistance performance are crucial factors in achieving high-quality wafer epitaxial growth.
Made from ultra-fine grain, high-purity graphite as their matrix with the dense silicon carbide coating via special processes, Semicorex 1x2" graphite wafer susceptors deliver the following functions:
Semicorex 1x2" graphite wafer susceptors feature precision machining and treatment, delivering exceptional surface flatness and dimensional accuracy. This ensures they are firmly secured in a suitable position and provides a stable, flat support platform for wafer epitaxial growth.
With the excellent thermal conductivity of graphite and SiC materials, Semicorex 1x2" graphite wafer susceptors provide rapid and uniform heat distribution across the semiconductor substance. By minimizing temperature gradients, Semicorex 1x2" graphite wafer susceptors can effectively avoid issues like uneven epitaxial quality and stress concentration.
Covered with the dense silicon carbide coating, Semicorex 1x2" graphite wafer susceptors are effectively resistant to majority chemicals, makig them suitable for applications in highly corrosive operating conditions where the material is frequently exposed to corrosive gases and chemical vapors.
Semicorex silicon carbide coating has a high bonding strength with the graphite matrix, which can significantly avoid the risk of substrate contamination due to coating detachment due to corrosion and particle fallout caused by high-corrosion environments.
Although graphite matrixes exhibits excellent thermal stability and mechanical strength, it is prone to corrosion and pulverization under operating conditions of epitaxial process, greatly shortens the lifespan of uncoated graphite matrixes. By fully encapsulating the graphite matrixes with dense SiC coatings, our 1×2" graphite wafer susceptors achieve superior and reliable durability.
Material data of Semicorex SiC Coating
|
Typical properties |
Units |
Values |
|
Structure |
/ |
FCC β phase |
| Orientation |
Fraction (%) |
111 preferred |
| Bulk density |
g/cm³ |
3.21 |
| Hardness |
Vickers hardness |
2500 |
| Heat Capacity |
J·kg⁻¹·K⁻¹ |
640 |
|
Thermal expansion 100–600 °C (212–1112 °F) |
10⁻⁶K⁻¹ |
4.5 |
|
Young's Modulus |
Gpa (4pt bend, 1300°C) |
430 |
|
Grain Size |
µm |
2 – 10 |
|
Sublimation Temperature |
°C |
2700 |
|
Flexural Strength |
MPa (RT 4-point) |
415 |
|
Thermal conductivity |
(W/mK) |
300 |