China alumina ceramic Manufacturers, Suppliers, Factory

The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.