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Wafer dicing is the final step in the semiconductor manufacturing process, separating silicon wafers into individual chips (also called dies). Plasma dicing uses a dry etching process to etch away the material in the dicing streets through fluorine plasma to achieve the separation effect. With the advancement of semiconductor technology, the market is increasingly demanding smaller, thinner, and more complex chips. Plasma dicing is gradually replacing traditional diamond blades and laser solutions because it can improve yield, production capacity, and design flexibility, becoming the first choice of the semiconductor industry.

Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

As a third-generation wide bandgap semiconductor material, SiC (silicon carbide) has excellent physical and electrical properties, which makes it have broad application prospects in the field of power semiconductor devices.