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    CVD TaC Coated Ring

    Semicorex CVD TaC Coated Ring reigns as a critical component in semiconductor processing, symbolizing the zenith of modern materials engineering. Crafted for implementation in the most rigorous environments where precision and reliability reign supreme, this ring embodies the fusion of cutting-edge coating techniques with resilient material science. Semicorex steadfastly delivers top-tier products at competitive prices, and we eagerly anticipate forging a longstanding partnership with you in China.*
  • Glassy Carbon Coating Felt

    Glassy Carbon Coating Felt

    Semicorex Glassy Carbon Coating Felt is a premium-grade insulation material designed to deliver exceptional thermal performance and process cleanliness in SiC epitaxial growth systems. Choose Semicorex for unmatched expertise in engineered carbon solutions, consistent product quality, and a deep commitment to supporting next-generation semiconductor manufacturing.*
  • CCM Brakes

    CCM Brakes

    Semicorex CCM Brakes, made from advanced carbon-ceramic matrix materials, are the ideal solution for high-performance braking in extreme driving environments. Choose Semicorex for our unmatched expertise in ceramic composite engineering, precision manufacturing, and commitment to delivering consistent, race-proven quality.*
  • Solar Graphite Boat

    Solar Graphite Boat

    Semicorex Solar Graphite Boat, a precision-engineered wafer holder designed to meet the exacting demands of high-temperature semiconductor processing. Crafted from premium-grade graphite, this innovative boat offers unparalleled thermal stability and durability, ensuring optimal performance in even the most demanding furnace environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ceramic Mechanical Seal

    Ceramic Mechanical Seal

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Ceramic Mechanical Seal has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Fused Quartz Pedestal

    Fused Quartz Pedestal

    The Fused Quartz Pedestal, is specifically designed for use in Atomic Layer Deposition (ALD), Low-Pressure Chemical Vapor Deposition (LPCVD), and diffusion processes, ensuring uniform deposition of thin films on wafer surfaces.**
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  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

  • LPE is the important method for preparing P-type 4H-SiC single crystal and 3C-SiC single crystal

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  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

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  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

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