English
Home > Products > Wafer Vacuum Sucker

China Wafer Vacuum Sucker Manufacturers, Suppliers, Factory

To frequently enhance the administration program by virtue on the rule of "sincerely, very good faith and high-quality are the base of enterprise development", we widely absorb the essence of related products internationally, and consistently develop new products to fulfill the calls for of customers for Wafer Vacuum Sucker,Wafer Handling Equipment,Electrostatic Chuck Semiconductor,Silicon Wafer Handling Tools,Sic Chuck, With our rules of " organization track record, partner trust and mutual benefit", welcome all of you to function together , improve jointly.
Wafer Vacuum Sucker, Our Company policy is "quality first, to be better and stronger, sustainable development" . Our pursuit goals is "for society, customers, employees, partners and enterprises to seek reasonable benefit". We aspirate to do cooperate with all different the auto parts manufacturers, repair shop, auto peer , then create a beautiful future! Thank you for taking time to browse our website and we would welcome any suggestions you may have that can help us to improve our site.

Related Products

Hot Products

  • Quartz Cleaning Tank

    Quartz Cleaning Tank

    Semicorex Quartz Cleaning Tank stands as a pinnacle in semiconductor processing, meticulously engineered to ensure the pristine purity essential for the delicate task of wafer cleaning. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Cassettes

    Wafer Cassettes

    Semicorex PFA Wafer Cassettes are high-performance component used to safely hold and transport wafers during semiconductor processing. Choose Semicorex for its industry-leading quality, ensuring superior wafer protection, contamination control, and compatibility with automated systems.*
  • CFC Cylinder

    CFC Cylinder

    Semicorex proudly presents the CFC Cylinder, a cutting-edge carbon-carbon composite material that exemplifies the pinnacle of advanced material science. This exceptional composite offers an unparalleled combination of lightweight properties and robust strength, making it the ideal choice for applications that demand resilience and reliability.
  • SiC Coating Flat Part

    SiC Coating Flat Part

    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • C/C Thermal Insulation Cylinders

    C/C Thermal Insulation Cylinders

    C/C thermal insulation cylinders are the high-performing thermal insulation components used in the thermal field system for single-crystal silicon growth, serving both thermal insulation and support functions. With exceptional thermal insulation performance, excellent structural strength, and competitive price, Semicorex C/C thermal insulation cylinders stand as the ideal option for your high-quality crystal growth processes.
  • Quartz Cold Trap

    Quartz Cold Trap

    Semicorex Quartz Cold Trap is the common glassware used in laboratory. Semicorex is specialized in precious machining for quartz products based on customers’ requirements.*
  • Related Blog
  • Reviews

  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Key Parameters of Silicon Carbide (SiC) Substrates

    The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

  • Various applications of quartz in semiconductor manufacturing

    At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept