SiC Focus Ring

Semicorex SiC Focus Ring is a precision-engineered, ring shape component, manufactured by high-purity silicon carbide. The SiC Focus Ring is designed for advanced semiconductor processing applications. High-purity silicon carbide provides excellent performance in terms of thermal stability (high melting point), mechanical durability (high hardness), and electrical conduction properties, which is critical to match the specifications of many next-generation wafer fabrication technologies. SiC Focus Ring are components found in plasma etching and deposition chamber components, and play an essential role in controlling plasma distribution, achieve wafer uniformity, and yield in mass production.

The material purity and electrical performance of the SiC Focus Ring are some of the most critical factors that define this component and differentiate it from ceramic materials. High-purity silicon carbide is unlike traditional ceramic materials, since it provides a combination of 

hardness as well as resistance to many chemicals, and unique electrical properties. Notably, more importantly, high-purity silicon carbide can be engineered using dopants and processing methods to produce the most suitable levels of conductive or insulting performance with the ideal semi-conducting balance to interact with the plasma, allowing for stable performance in high-energy environments where charge build up and electrical imbalance are more likely to cause process errors.

Due to the edge effect of plasma, the density is higher in the center and lower at the edges. The focus ring, through its annular shape and the material properties of CVD SiC, generates a specific electric field. This field guides and confines the charged particles (ions and electrons) in the plasma to the wafer surface, particularly at the edge. This effectively raises the plasma density at the edge, bringing it closer to that in the center. This significantly improves etching uniformity across the wafer, reduces edge damage, and increases yield.

Mercury Manufacturing processes the SiC Focus Ring utilizing sophisticated machining and polishing processes that achieve tight dimensional tolerances and a smooth surface finish. The dimensional accuracy of these components enables compatibility with the various semiconductor equipment suppliers to ensure interchangeability across many plasma etch and deposition systems. Custom designs can also be developed to meet specific process requirements including ring thickness, inner and outer diameter, and levels of surface conductivity.

Applications of SiC Focus Ring cover a wide array in semiconductor fabrication: DRAM, NAND flash, Logic devices, and new power semiconductor technologies. As device geometries shrink and continue to advance through process nodes, the need for highly reliable stable chamber components like the SiC Focus Ring becomes critical. The SiC Focus Ring affords exact control of the plasma and consistently improves wafer quality, furthering the industry’s ambitions toward ever-smaller, faster, and efficient electronic devices. Semicorex SiC Focus Ring defines the intersection point of materials science, precision engineering, and semiconductor process evolution. The SiC Focus Ring has excellent thermal stability, superior chemical resistance, and near specific electrical conductivity. These features make it a critical component in ensuring reliability and yield during processes.