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Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of SiC chuck,porous ceramic,Microporous SiC,wafer chuck,vacuum chuck, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
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    The Semicorex Ion Implantation Parts made of high-purity graphite components are engineered to meet the rigorous demands of semiconductor manufacturing, specifically for use in ion implantation equipment. These components boast several critical advantages that make them ideal for high-performance applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Ion Implantation Parts that fuse quality with cost-efficiency.
  • Wafer Cassettes

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  • Related Blog
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  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

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    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

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    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

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    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

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