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China SiC chuck Manufacturers, Suppliers, Factory

Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of SiC chuck,porous ceramic,Microporous SiC,wafer chuck,vacuum chuck, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
SiC chuck, Our factory is equipped with complete facility in 10000 square meters, which makes us be able to satisfy the producing and sales for most auto part products and solutions. Our advantage is full category, high quality and competitive price! Based on that, our goods win a high admiration both at home and abroad.

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    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • What is C/C composite?

    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

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