English
Home > Products > Silicon Wafer Handling Tools

China Silicon Wafer Handling Tools Manufacturers, Suppliers, Factory

"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for Silicon Wafer Handling Tools,Wafer Handling Equipment,Electrostatic Chuck Semiconductor,Wafer Vacuum Sucker,Sic Chuck, Welcome any inquiry to our firm. We will be happy to ascertain helpful business enterprise relationships along with you!
Silicon Wafer Handling Tools, We strongly believe that technology and service is our base today and quality will create our reliable walls of future. Only we've better and better quality , could we achieve our customers and ourselves, too. Welcome customers all over the word to contact us for getting further business and reliable relationships. We have been always here working for your demands whenever you want.

Related Products

Hot Products

  • End Effector for Wafer Handling

    End Effector for Wafer Handling

    Semicorex End Effector for Wafer Handling are dimensionally precise and thermally stable for wafer processing. We have been manufacturer and supplier of silicon carbide coating elements for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Carbon and Graphite Soft Felt

    Carbon and Graphite Soft Felt

    Semicorex Carbon and graphite soft felt is a specialized material that is made from carbon fibers or graphite fibers that are intertwined to form a soft, flexible, and porous structure. It is commonly used in various industrial applications due to its unique properties.
  • High-Purity Graphite Isostatic Graphite

    High-Purity Graphite Isostatic Graphite

    Semicorex provide high-purity graphite isostatic graphite with customized service, best choice in the semiconductor processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Solar Graphite Boat for PECVD

    Solar Graphite Boat for PECVD

    Semicorex provide high-quality Solar Graphite Boat for PECVD with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Inlet Rings

    SiC Inlet Rings

    Semicorex SiC Inlet Rings are high-performance silicon carbide components engineered for semiconductor processing equipment, offering exceptional thermal stability, chemical resistance, and precision machining. Choosing Semicorex means gaining access to reliable, customized, and contamination-free solutions trusted by leading semiconductor manufacturers.*
  • C/C Composite Fasteners

    C/C Composite Fasteners

    Semicorex's C/C composite fasteners made from high-performance carbon-carbon composite materials, which undergo precision machining to meet strict standards, all designed specifically for extreme high-temperature conditions. What makes these C/C composite fasteners stand out is their combination of low density, outstanding high-temperature resistance, superior thermal stability, and exceptional chemical resistance. These qualities together deliver a fastening solution that’s safe, dependable, and long-lasting, perfectly suited for high-end equipment.
  • Related Blog
  • Reviews

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Silicon Carbide Applications

    Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

  • What is CMP Process

    In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept