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    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • Barrel Susceptor for Liquid Phase Epitaxy

    Barrel Susceptor for Liquid Phase Epitaxy

    If you need a graphite susceptor that can perform reliably and consistently in even the most demanding high-temperature and corrosive environments, the Semicorex Barrel Susceptor for Liquid Phase Epitaxy is the perfect choice. Its silicon carbide coating provides excellent thermal conductivity and heat distribution, ensuring exceptional performance in semiconductor manufacturing applications.
  • SiC Graphite RTP Carrier Plate for MOCVD

    SiC Graphite RTP Carrier Plate for MOCVD

    Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • Upper Half Moon

    Upper Half Moon

    Semicorex Upper Half Moon is a semi-circular SiC coated graphite wafer susceptor designed for use in epitaxial reactors. Choose Semicorex for industry-leading material purity, precision machining, and uniform SiC coating that ensures long-lasting performance and superior wafer quality.*
  • 8 inch EPI Bottom Ring

    8 inch EPI Bottom Ring

    Semicorex 8 inch EPI Bottom Ring is a robust SiC coated graphite component essential for epitaxial wafer processing. Choose Semicorex for unmatched material purity, coating precision, and reliable performance in every production cycle.*
  • Silicon Carbide Chucks

    Silicon Carbide Chucks

    Semicorex silicon carbide chucks are specially designed for photolithography equipment and have multiple advantages such as high precision, ultra-light weight, high stiffness, low coefficient of thermal expansion, and excellent wear resistance.
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    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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  • Wolfspeed Pauses German Semiconductor Plant Construction Plans

    According to reports from German media, U.S. chip manufacturer Wolfspeed is pausing its plans to build a semiconductor plant in Germany.

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