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To be a result of ours specialty and repair consciousness, our corporation has won a good popularity amid consumers everywhere in the environment for FAB,CVD SiC,shower head,CVD SiC Showerhead,electrodes, We welcome an prospect to do small business along with you and hope to have pleasure in attaching further particulars of our merchandise.
FAB, Based on our automatic production line, steady material purchase channel and quick subcontract systems have been built in mainland China to meet customer's wider and higher requirement in recent years. We have been looking forward to cooperating with more clients worldwide for common development and mutual benefit!Your trust and approval are the best reward for our efforts. Keeping honest, innovative and efficient, we sincerely expect that we can be business partners to create our brilliant future!

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  • TaC Coating Epitaxial Plate

    TaC Coating Epitaxial Plate

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    Epi-SiC Susceptor

    Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Epitaxial Module

    SiC Epitaxial Module

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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

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