China FAB Manufacturers, Suppliers, Factory

The Semicorex Carbide-Coated Reactor Barrel Susceptor is a premium quality graphite product coated with high-purity SiC, designed specifically for LPE processes. With excellent heat and corrosion resistance, this product is perfect for use in semiconductor manufacturing applications.

Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Semicorex Tantalum Carbide Crucible is a crucial component in the semiconductor industry, specifically designed for the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.

Semicorex SiC Heating Filament is a silicon carbide coated graphite heater designed for wafer heating in advanced semiconductor manufacturing. Choosing Semicorex means selecting a trusted partner that delivers high-purity materials, precision customization, and long-lasting performance for the most demanding thermal processes.*

SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.