English
Home > Products > PSS Fabricated by Dry Etching

China PSS Fabricated by Dry Etching Manufacturers, Suppliers, Factory

To be a result of ours specialty and repair consciousness, our corporation has won an excellent reputation amongst customers all around the entire world for PSS Fabricated by Dry Etching,Etch Carrier(ICP/PSS),Tray for LED,Carrier Plate for PSS Etching,Sapphire Etching, How about to start your great enterprise with our corporation? We've been prepared, qualified and fulfilled with pride. Let’s start our new business with new wave.
PSS Fabricated by Dry Etching, We set a strict quality control system. We now have return and exchange policy, and you can exchange within 7 days after receive the wigs if it is in new station and we service repairing free for our products. You should feel free to contact us for further information and we will present you competitive price list then.

Related Products

Hot Products

  • Wafer Carriers

    Wafer Carriers

    Semicorex Wafer carriers, also known as wafer cassettes, play a critical role in maintaining these standards. These specialized containers are designed to safely store and transport silicon wafers, which are the foundational material for semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Microporous SiC Chuck

    Microporous SiC Chuck

    Semicorex Microporous SiC Chuck is a high-precision vacuum chuck designed for secure wafer handling in semiconductor processes. Choose Semicorex for our customizable solutions, superior material selection, and commitment to precision, ensuring optimal performance in your wafer processing needs.*
  • TaC Coated Tube

    TaC Coated Tube

    Semicorex TaC Coated Tube represents a pinnacle of material science, engineered to withstand the extreme conditions encountered in advanced semiconductor fabrication. Created by applying a dense, uniform layer of TaC onto a high-purity isotropic graphite substrate via Chemical Vapor Deposition (CVD), the TaC Coated Tube offers a compelling combination of properties that surpass conventional materials in demanding high-temperature and chemically aggressive environments.**
  • 850V High Power GaN-on-Si Epi Wafer

    850V High Power GaN-on-Si Epi Wafer

    Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • C/SiC Brakes

    C/SiC Brakes

    Semicorex C/SiC brakes offer a lightweight, high-performance braking solution with exceptional heat resistance, durability, and consistent performance, making them ideal for vehicles, and aerospace applications.*
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • Related Blog
  • Reviews

  • Chip Manufacturing: Thin Film Processes

    The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

  • Korean memory chips plummeted

  • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

    As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept