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China semiconductor device fabrication Manufacturers, Suppliers, Factory

We depend on sturdy technical force and continually create sophisticated technologies to meet the demand of semiconductor device fabrication,wafer processing,semiconductor production,wafer handling,vacuum end effector, Therefore, we could satisfy different inquiries from different clients. Remember to come across our web site to check additional facts from our items.
semiconductor device fabrication Lamp, Due to the stability of our products, timely supply and our sincere service, we are able to sell our goods not only over the domestic market, but also exported to countries and regions, including the Middle East, Asia, Europe and other countries and regions. At the same time, we also undertake OEM and ODM orders. We'll do our best to serve your company, and establish a successful and friendly cooperation with you.

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    Semicorex semiconductor wafer boat for vertical furnaces is a specialized tool used in the manufacturing process of semiconductor devices. It is designed to hold and transport silicon wafers during the various stages of wafer processing in a vertical furnace. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ga2O3 Substrate

    Ga2O3 Substrate

    Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
  • CVD SiC Ring

    CVD SiC Ring

    Semicorex CVD SiC Ring stands as an essential component within the intricate landscape of semiconductor manufacturing, specifically designed to play a crucial role in the etching process. Crafted with precision and innovation, this ring is exclusively fashioned from Chemical Vapor Deposition Silicon Carbide (CVD SiC), exemplifying a material known for its exceptional properties in the demanding semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Crucible

    Tantalum Carbide Crucible

    Semicorex Tantalum Carbide Crucible is a crucial component in the semiconductor industry, specifically designed for the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Glass-like Carbon Coated Rigid Felt

    Glass-like Carbon Coated Rigid Felt

    The Glass-like Carbon Coated Rigid Felt, a signature product of Semicorex,consists of a Carbon Fiber rigid felt substrate enveloped by a glass-like carbon coating, combining the inherent strength of the felt with the exceptional surface properties of the glass-like carbon. Together, they create a material that stands out for its performance under extreme conditions.**
  • Silicon Pedestal Boat

    Silicon Pedestal Boat

    Semicorex Silicon Pedestal Boat is a 9N ultra-high purity wafer carrier engineered for precise and stable wafer support in high-temperature oxidation, diffusion, and LPCVD processes. Choose Semicorex for unmatched material purity, precision machining, and proven reliability*
  • Related Blog
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  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

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