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China semiconductor device fabrication Manufacturers, Suppliers, Factory

We depend on sturdy technical force and continually create sophisticated technologies to meet the demand of semiconductor device fabrication,wafer processing,semiconductor production,wafer handling,vacuum end effector, Therefore, we could satisfy different inquiries from different clients. Remember to come across our web site to check additional facts from our items.
semiconductor device fabrication Lamp, Due to the stability of our products, timely supply and our sincere service, we are able to sell our goods not only over the domestic market, but also exported to countries and regions, including the Middle East, Asia, Europe and other countries and regions. At the same time, we also undertake OEM and ODM orders. We'll do our best to serve your company, and establish a successful and friendly cooperation with you.

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  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • Silicon Carbide Epitaxy Susceptor

    Silicon Carbide Epitaxy Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Tantalum Carbide Guide Ring

    Tantalum Carbide Guide Ring

    Semicorex Tantalum Carbide Guide Ring is a graphite ring coated with tantalum carbide, used in silicon carbide crystal growth furnaces for seed crystal support, temperature optimization, and enhanced growth stability. Choose Semicorex for its advanced materials and design, which significantly improve the efficiency and quality of crystal growth.*
  • SiC Rotary Seal Ring

    SiC Rotary Seal Ring

    Semicorex SiC Rotary Seal Ring is designed to perform under high-pressure and high-temperature conditions. Its stability and durability in such environments make it an invaluable component in sealing applications where traditional materials might fail.
  • SiC Wafer Cassette

    SiC Wafer Cassette

    Semicorex SiC Wafer Cassette is a high-purity, precision-engineered wafer handling component designed to meet the stringent demands of advanced semiconductor manufacturing. Semicorex delivers a solution built for stability, cleanliness, and precision — ensuring the safe, reliable transport and processing of wafers under high-temperature and ultra-clean environments.*
  • Graphite Copper Sleeve

    Graphite Copper Sleeve

    Semicorex Graphite Copper Sleeve is a type of sleeve that relies on its own lubricant for lubrication. The product uses copper alloy as the base material, with orderly arranged and appropriately sized holes drilled into the base, and then graphite plugs are embedded in it. Semicorex can supply the finished graphite copper sleeve, or customized graphite plugs.*
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  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • SiC Cutting

    Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

  • Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

    When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

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