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  • CVD SiC Pancake Susceptor

    CVD SiC Pancake Susceptor

    Unleash the pinnacle of precision in semiconductor manufacturing with our cutting-edge CVD SiC Pancake Susceptor. This disc-shaped component, expertly designed for semiconductor equipment, serves as a crucial element for supporting thin semiconductor wafers during high-temperature epitaxial deposition processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Rotary Seal Ring

    SiC Rotary Seal Ring

    Semicorex SiC Rotary Seal Ring is designed to perform under high-pressure and high-temperature conditions. Its stability and durability in such environments make it an invaluable component in sealing applications where traditional materials might fail.
  • Bronze Graphite Bushing

    Bronze Graphite Bushing

    Semicorex bronze graphite bushing has the characteristics of high-load capacity, impact resistance, high-temperature resistance, strong self-lubrication ability, and can also withstand the erosion and scouring of corrosive liquids. This bronze graphite bushing is particularly suitable for equipment operating under complex working conditions where oil-free, high-temperature, high-load, low-speed, anti-fouling, anti-corrosion, and anti-radiation environment.
  • AlN Heater

    AlN Heater

    The AlN Heater by Semicorex is designed to support and heat silicon wafers. Crafted from high-purity aluminum nitride (AlN), this heater offers an array of advanced features that cater to the needs of various high-precision applications, particularly in the semiconductor industry.**
  • CVD TaC Coated Ring

    CVD TaC Coated Ring

    Semicorex CVD TaC Coated Ring reigns as a critical component in semiconductor processing, symbolizing the zenith of modern materials engineering. Crafted for implementation in the most rigorous environments where precision and reliability reign supreme, this ring embodies the fusion of cutting-edge coating techniques with resilient material science. Semicorex steadfastly delivers top-tier products at competitive prices, and we eagerly anticipate forging a longstanding partnership with you in China.*
  • SiC ALD Susceptor

    SiC ALD Susceptor

    Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**
  • Related Blog
  • Reviews

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • What Are the Applications of SiC and TaC Coatings in the Semiconductor Field?

    Semiconductors are materials whose electrical conductivity at room temperature lies between that of insulators and conductors. By introducing impurities, a process known as doping, these materials can become conductors.

  • Annealing

    Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • What is the advantage of silicon carbide?

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