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keep on to improve, to make sure solution good quality in line with market and shopper standard requirements. Our business has a top quality assurance program are actually established for semiconductor fabrication,diffusion heater,vertical diffusion furnace,wafer annealing,monosilicon, We welcome new and aged consumers to speak to us by telephone or send out us inquiries by mail for long term company associations and attaining mutual results.
semiconductor fabrication, Our company offers the full range from pre-sales to after-sales service, from product development to audit the use of maintenance, based on strong technical strength, superior product performance, reasonable prices and perfect service, we will continue to develop, to provide the high-quality products and services, and promote lasting cooperation with our customers, common development and create a better future.

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    Silicon Epitaxial Deposition In Barrel Reactor

    If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
  • ICP Plasma Etching System for PSS Process

    ICP Plasma Etching System for PSS Process

    Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
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    4" 6" 8" N-type SiC Ingot

    Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiN Ceramics Plain Substrates

    SiN Ceramics Plain Substrates

    SiN Ceramics Plain Substrates is a high-performance material known for its thermal stability, mechanical strength, electrical insulation, corrosion resistance, and dielectric properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • PBN Composite Heaters

    PBN Composite Heaters

    Semicorex PBN Composite Heaters are advanced heating elements engineered for high-temperature, ultra-clean vacuum environments, widely used in semiconductor, optoelectronics, and material research industries. Choose Semicorex for industry-leading expertise, small-batch customization, and world-class quality in PBN heating solutions.*
  • Impregnated Graphite

    Impregnated Graphite

    Semicorex Impregnated Graphite is a high-performance composite material created through high-pressure resin impregnated, offering exceptional strength, wear resistance, and corrosion protection for sealing and lubrication applications. Choose Semicorex for advanced impregnation technology, ultra-precise machining, and consistent material quality.*
  • Related Blog
  • Reviews

  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Application of SiC and GaN in electric vehicles

    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • Demystifying Electrostatic Chuck (ESC) Technology in Wafer Handling

    Electrostatic chucks (ESCs) have become indispensable in semiconductor manufacturing and flat panel display production, offering a damage-free, highly controllable method for holding and positioning delicate wafers and substrates during critical processing steps. This article delves into the intricacies of ESC technology, exploring its principles of operation, various adhesion mechanisms, and fundamental structural components.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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