CVD SiC Shower heads

Semicorex CVD SiC Shower Heads are high-purity, precision-engineered component designed for CCP and ICP etching systems in advanced semiconductor manufacturing. Choosing Semicorex means gaining reliable solutions with superior material purity, machining accuracy, and durability for the most demanding plasma processes.*

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Product Description

Semicorex CVD SiC shower heads are used for CCP etching. CCP etchers use two parallel electrodes (one grounded, the other connected to an RF power source) to generate plasma. The plasma is maintained between the two electrodes by the electric field between them. The electrodes and gas distribution plate are integrated into a single component. Etching gas is uniformly sprayed onto the wafer surface through small holes in the CVD SiC shower heads.Simultaneously, an RF voltage is applied to the showerhead (also the upper electrode). This voltage generates an electric field between the upper and lower electrodes, exciting the gas to form a plasma. This design results in a simpler and more compact structure while ensuring uniform distribution of gas molecules and a uniform electric field, enabling uniform etching of even large wafers.

CVD SiC shower heads can also be applied in ICP etching. ICP etchers use an induction coil (typically a solenoid) to generate an RF magnetic field, which inducing current and plasma. The CVD SiC shower heads, as a separate component, are responsible for evenly delivering the etching gas into the plasma region.

The CVD SiC Shower Head is a high-purity and precision-manufactured component for semiconductor processing equipment that is fundamental to gas distribution and electrode capability. Utilizing chemical vapor deposition (CVD) manufacturing, the shower head achieves exception

al purity of materials and outstanding dimensional control that meets the rigorous requirements of future semiconductor manufacturing.

High purity is one of the defining advantages of CVD SiC Shower Heads.In semiconductor processing, even the slightest contamination can significantly impact wafer quality and device yield. This showerhead utilizes ultra-clean-grade CVD silicon carbide to minimize particle and metal contamination. This showerhead ensures a clean environment and is ideal for demanding processes such as chemical vapor deposition, plasma etching, and epitaxial growth.

In addition, precision machining shows excellent dimensional control and surface quality. The gas distribution holes in the CVD SiC Shower Head are made with strict tolerances that help ensure uniform and controlled gas flow across the wafer surface. Precise gas flow improves film uniformity and repeatability and can improve yield and productivity. Machining also helps reduce surface roughness, which can decrease particle build-up and also improve component lifetime.

CVD SiC has inherent material properties that contribute to the shower head's performance and durability, including high thermal conductivity, plasma resistance, and mechanical strength. The CVD SiC Shower Head can survive in extreme process environments - high temperature, corrosive gases, etc. - while maintaining performance across extended service cycles.

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