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    Semicorex SiC Ceramic Seal Part stands as a testament to cutting-edge materials science and engineering prowess, designed to meet the exacting demands of high-performance mechanical sealing applications across a variety of industries.**
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    SiC Coated Graphite Trays

    Semicorex SiC Coated Graphite Trays are high-performance carrier solutions specifically designed for AlGaN epitaxial growth in the UV LED industry. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding MOCVD environments.*
  • Epitaxy Wafer Carrier

    Epitaxy Wafer Carrier

    Semicorex Epitaxy Wafer Carrier provides a highly reliable solution for Epitaxy applications.The advanced materials and coating technology ensure that these carriers deliver outstanding performance, reducing operational costs and downtime due to maintenance or replacement.**
  • Sapphire Crystal Growth Insulator

    Sapphire Crystal Growth Insulator

    Semicorex Sapphire Crystal Growth Insulator play an indispensable role in the operation of sapphire single crystal furnaces, spearheading critical functions throughout the entirety of the crystal growth process. By maintaining a stable furnace temperature, these components significantly reduce energy loss and enhance the quality of the growing crystals. We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Insulator that fuse quality with cost-efficiency.
  • Pure Graphite Sheets

    Pure Graphite Sheets

    Semicorex pure graphite sheets are a reliable and effective sealing solution for industrial applications that require high-performance sealing and thermal management properties. Their exceptional properties make them well-suited for use in industries such as automotive, aerospace, oil and gas, and many others. We look forward to becoming your long-term partner in China.
  • SOI Wafer

    SOI Wafer

    Semicorex SOI Wafer is a high-performance semiconductor substrate that features a thin silicon layer atop an insulating material, optimizing device efficiency, speed, and power consumption. With customizable options, advanced manufacturing techniques, and a focus on quality, Semicorex provides SOI wafers that ensure superior performance and reliability for a wide range of cutting-edge applications.*
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    The surface of the gas distribution plate features hundreds or even thousands of tiny, precisely arranged holes, resembling a finely woven neural network.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • What is isostatic graphite?

    Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

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