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SiC Coating Graphite Substrate Wafer Carriers for MOCVD

SiC Coating Graphite Substrate Wafer Carriers for MOCVD

You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.

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Product Description

The SiC Coating Graphite Substrate Wafer Carrier for MOCVD plays a crucial role in the semiconductor manufacturing process. Our product is highly stable, even in extreme environments, making it an excellent choice for the production of high-quality wafers.
The features of our SiC Coating Graphite Substrate Wafer Carriers for MOCVD are outstanding. Its dense surface and fine particles enhance its corrosion resistance, making it resistant to acid, alkali, salt, and organic reagents. The carrier ensures an even thermal profile and guarantees the best laminar gas flow pattern, preventing any contamination or impurities from diffusing into the wafer.


Parameters of SiC Coating Graphite Substrate Wafer Carriers for MOCVD

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




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