English
Home > Products > quartz wafer boat

China quartz wafer boat Manufacturers, Suppliers, Factory

We believe that long expression partnership is often a result of top of the range, value added service, prosperous encounter and personal contact for quartz wafer boat,fused silica glass,fused quartz,clear fused quartz,fused silica sio2, Are you still on the lookout for a good quality product that is in accordance together with your very good organization image while expanding your item range? Consider our quality merchandise. Your choice will prove to be intelligent!
quartz wafer boat, With the effort to keep pace with world's trend, we'll always endeavor to meet customers' demands. If you want develop any other new items, we can customize them to suit your needs. If you feel interest in any of our products and solutions or want develop new merchandise, you should feel free to contact us. We are looking forward to forming successful business relationship with customers all over the world.

Related Products

Hot Products

  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • Porous Carbon

    Porous Carbon

    Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Chuck

    TaC Coating Chuck

    Semicorex TaC Coating Chuck, the cutting-edge vacuum chuck equipped with TaC coatings, specifically designed for semiconductor furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Boats

    SiC Boats

    Semicorex SiC boats are high-performance silicon carbide ceramic wafer holders designed for precision and durability in diffusion processes. Choose Semicorex for unmatched quality, industry expertise, and tailored solutions that optimize your manufacturing efficiency.*
  • Silicon Shield Ring

    Silicon Shield Ring

    Semicorex Silicon Shield Ring is a high-purity silicon component engineered for advanced plasma etching systems, serving as both a protective shield and an auxiliary electrode. Semicorex ensures ultra-clean performance, process stability, and superior etching results with precision-engineered semiconductor components.*
  • Semiconductor Graphite Heater

    Semiconductor Graphite Heater

    Semicorex semiconductor graphite heater is a high-efficiency heating device made from high-quality isostatic graphite. It is widely used in the core process links of semiconductor manufacturing, such as the thermal field of crystal growth furnaces, epitaxial growth processes, ion implantation equipment, plasma etching equipment, and the production of semiconductor device sintering molds.
  • Related Blog
  • Reviews

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Silicon Carbide Ceramics and Their Diverse Fabrication Processes

    This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

  • GaN Single Crystal

    Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

Related Search

Quartz Wafer Boat

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept