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  • Silicon Carbide Coating Graphite Susceptor for MOCVD

    Silicon Carbide Coating Graphite Susceptor for MOCVD

    Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Durable Focus Rings for Semiconductor Processing

    Durable Focus Rings for Semiconductor Processing

    Semicorex durable focus rings for semiconductor processing are designed to withstand the extreme environments of plasma etch chambers used in semiconductor processing. Our focus rings are made of high-purity graphite coated with a dense, wear-resistant silicon carbide (SiC) coating. The SiC coating has high corrosion and heat resistance properties, as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process to improve the service life of our focus rings.
  • Custom SiC Cantilever Paddle

    Custom SiC Cantilever Paddle

    Semicorex Custom SiC Cantilever Paddle has become an indispensable component in the photovoltaic industry, playing a critical role in the efficient and precise handling of silicon wafers during high-temperature diffusion processes. The Custom SiC Cantilever Paddle, meticulously engineered from high-performance silicon carbide (SiC) ceramics, offers a unique blend of properties essential for maintaining wafer integrity, ensuring process uniformity, and maximizing productivity in demanding diffusion furnace environments.**
  • SiN Substrates

    SiN Substrates

    Semicorex Silicon Nitride SiN substrates are high-performance materials known for their exceptional strength, thermal conductivity, and chemical stability, making them ideal for advanced semiconductor applications. Choosing Semicorex SiN substrates ensures you benefit from cutting-edge technology, rigorous quality control, and a commitment to delivering reliable, industry-leading semiconductor components.*
  • CFC Cylinder

    CFC Cylinder

    Semicorex proudly presents the CFC Cylinder, a cutting-edge carbon-carbon composite material that exemplifies the pinnacle of advanced material science. This exceptional composite offers an unparalleled combination of lightweight properties and robust strength, making it the ideal choice for applications that demand resilience and reliability.
  • Silicon carbide cooling ducts

    Silicon carbide cooling ducts

    Made of the high performing silicon carbide ceramic, silicon carbide cooling ducts are performant pipe components used in cooling processes of high-temperature industrial kilns. Choose Semicorex for precision-engineered Silicon carbide cooling ducts that ensure consistent quality, cost-effective price, and maximized cooling efficiency.
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  • Reviews

  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

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