Silicon Epitaxial Deposition In Barrel Reactor

If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.

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Product Description

Semicorex Silicon Epitaxial Deposition In Barrel Reactor is an ideal product for growing epixial layers on wafer chips. It is a high-purity SiC coated graphite carrier that is highly resistant to heat and corrosion, making it perfect for use in extreme environments. This barrel susceptor is suitable for LPE, and it provides excellent thermal performance, ensuring the evenness of the thermal profile. Additionally, it guarantees the best laminar gas flow pattern and prevents contamination or impurities from diffusing into the wafer.

At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Silicon Epitaxial Deposition In Barrel Reactor has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.

Parameters of Silicon Epitaxial Deposition In Barrel Reactor

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Silicon Epitaxial Deposition In Barrel Reactor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.