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  • Porous Carbon

    Porous Carbon

    Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Graphite Lid Cover

    SiC Coated Graphite Lid Cover

    Unlock the epitome of performance and durability in the realm of semiconductor equipment with our cutting-edge SiC Coated Graphite Lid Cover. This disc-shaped component is expertly designed for various semiconductor applications, offering a unique combination of graphite and Silicon Carbide (SiC) coating to enhance functionality and efficiency. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Edge Rings

    Edge Rings

    Semicorex Edge Rings are trusted by leading semiconductor fabs and OEMs worldwide. With strict quality control, advanced manufacturing processes, and application-driven design, Semicorex provides solutions that extend tool life, optimize wafer uniformity, and support advanced process nodes.*
  • SiC Barrel for Silicon Epitaxy

    SiC Barrel for Silicon Epitaxy

    Semicorex SiC Barrel For Silicon Epitaxy is a engineered to meet the demanding requirements of Applied Materials and LPE units. Crafted with precision and innovation, this barrel-shaped susceptor is manufactured from high-quality SiC-coated graphite, ensuring exceptional performance and durability in silicon epitaxy applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 6 Inch N-type SiC Wafer

    6 Inch N-type SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our double-polished 6 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Process Tube Liners

    SiC Process Tube Liners

    Semicorex SiC (Silicon Carbide) Process Tube Liners are crucial components in the production of semiconductors within environments that require high temperatures and high levels of purity. These SiC Process Tube Liners are specifically designed to endure extreme thermal conditions and maintain high levels of purity to ensure that the semiconductor manufacturing process is not compromised. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Silicon Carbide Ceramic Membrane: a new separation membrane that is expected to replace various inorganic membranes

    Silicon carbide ceramic membranes have the characteristics of high chemical stability, good thermal shock resistance, strong hydrophilicity, large membrane flux, high mechanical strength, concentrated pore size distribution, and good pore structure gradient.

  • What is isostatic graphite?

    Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

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