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Our pursuit and company purpose is always to "Always satisfy our consumer requirements". We keep on to acquire and style and design remarkable high-quality products for each our outdated and new customers and reach a win-win prospect for our consumers as well as us for quartz fiber,Quartz Injector,clear quartz,Ignition Injector,HPQ Injector, We feel that our warm and experienced company will bring you pleasant surprises as perfectly as fortune.
quartz fiber, We have been in operation for more than 10 years. We have been dedicated to quality products and solutions and consumer support. We currently own 27 product utility and design patents. We invite you to visit our company for a personalized tour and advanced business guidance.

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  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • SiC Coated Graphite Susceptor for MOCVD

    SiC Coated Graphite Susceptor for MOCVD

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • TaC Coated Graphite Parts

    TaC Coated Graphite Parts

    Semicorex TaC Coated Graphite Parts are precision-crafted components that are specially designed to withstand the demanding environment of semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • LPE Halfmoon Reaction Chamber

    LPE Halfmoon Reaction Chamber

    Semicorex LPE Halfmoon Reaction Chamber is indispensable for the efficient and reliable operation of SiC epitaxy, ensuring the production of high-quality epitaxial layers while reducing maintenance costs and increasing operational efficiency. **
  • 1x2

    1x2" Graphite Wafer Susceptors

    Semicorex 1x2" graphite wafer susceptors are the high-performing carrying components specially engineered for 2-inch wafers, which are well-suited for the epitaxial process of semiconductor wafers. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding epitaxial growth environments.
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  • Reviews

  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • Detailed Explanation of Semiconductor CVD SiC Process Technology(Part.I)

    Before discussing the Chemical Vapor Deposition (CVD) silicon carbide (Sic) process technology, let's first review some basic knowledge about "chemical vapor deposition." Chemical Vapor Deposition (CVD) is a commonly used technique for preparing various coatings. It involves depositing gaseous reactants onto a substrate surface under appropriate reaction conditions to form a uniform thin film or coating.

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