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  • ALD Planetary Susceptor

    ALD Planetary Susceptor

    Semicorex ALD Planetary Susceptor is important in ALD equipment due to their ability to withstand harsh processing conditions, ensuring high-quality film deposition for a variety of applications. As the demand for advanced semiconductor devices with smaller dimensions and enhanced performance continues to grow, the use of the ALD Planetary Susceptor in ALD is expected to expand further.**
  • Wafer Loader Arm

    Wafer Loader Arm

    Semicorex Wafer Loader Arm's ability to withstand extreme conditions while maintaining exceptional performance underscores its value in optimizing manufacturing processes and achieving higher levels of productivity and quality.The integration of high-purity alumina ceramic material ensures superior cleanliness, precision, and durability.**
  • 6 inch SiC Boat

    6 inch SiC Boat

    Semicorex 6 Inch SiC Boat is a high-performance wafer carrier made from silicon carbide, designed for use in high-temperature semiconductor processes such as oxidation and diffusion. Semicorex provides superior-quality products with exceptional thermal stability, excellent chemical resistance, and a commitment to reliable, long-lasting performance in demanding semiconductor applications.*
  • C/C-SiC Brake Discs

    C/C-SiC Brake Discs

    Semicorex C/C-SiC brake discs provide the perfect balance of strength, durability, and heat resistance, making them the ultimate choice for high-performance braking systems. Semicorex continues to lead the industry with its cutting-edge materials and engineering expertise, delivering superior solutions that redefine braking technology.*
  • SiC Vacuum Chucks

    SiC Vacuum Chucks

    Semicorex SiC Vacuum Chucks are high-performance ceramic fixture designed for secure wafer adsorption in semiconductor manufacturing. With superior thermal, mechanical, and chemical properties, it ensures stability and precision in demanding process environments.*
  • SiC Oxidation Tube

    SiC Oxidation Tube

    Semicorex SiC Oxidation Tube is a high-performance component used in SiC tube furnaces for advanced semiconductor thermal processing. It is designed for long-term stability in extreme conditions. Choose Semicorex for our superior material purity, tight dimensional control, and consistent product quality, helping you achieve optimal results in every high-temperature run.*
  • Related Blog
  • Reviews

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

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