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Both are N-type semiconductors, but what's the difference between arsenic and phosphorus doping in single-crystal silicon? In single-crystal silicon, arsenic (As) and phosphorus (P) are both commonly used N-type dopants (pentavalent elements that provide free electrons). However, due to differences in atomic structure, physical properties, and processing characteristics, their doping effects and application scenarios differ significantly.

The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.