English
Home > Products > fused silica crucibles

China fused silica crucibles Manufacturers, Suppliers, Factory

We have state-of-the-art tools. Our products are exported towards the USA, the UK and so on, enjoying a fantastic reputation amongst customers for fused silica crucibles,fused quartz,fused quartz crucible,fused silica glass,fused quartz glass, And there are quite a few international friends who came for sight seeing, or entrust us to buy other stuff for them. You might be most welcome to arrive to China, to our city also to our factory!
fused silica crucibles, As a way to make use of the resource on the expanding information and facts in international trade, we welcome prospects from everywhere on the web and offline. In spite in the top quality products and solutions we offer, effective and satisfying consultation service is supplied by our professional after-sale service group. Solution lists and comprehensive parameters and any other info weil be sent for you timely for the inquiries. So remember to get in touch with us by sending us emails or contact us if you have any concerns about our firm. ou can also get our address info from our web site and come to our enterprise. or a field survey of our solutions. We're confident that we're likely to share mutual results and build solid co-operation relations with our companions in this market. We're looking forward to your inquiries.

Related Products

Hot Products

  • ICP Plasma Etching Plate

    ICP Plasma Etching Plate

    Semicorex's ICP Plasma Etching Plate provides superior heat and corrosion resistance for wafer handling and thin film deposition processes. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • ICP Plasma Etching System

    ICP Plasma Etching System

    Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • TaC Coating Ring

    TaC Coating Ring

    Semicorex TaC Coating Ring stands as a pivotal component in the realm of monocrystal growth within the thermal field. Crafted with precision and innovation, this specialized guide ring plays a crucial role in the intricate process of monocrystalline material production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Epi-Wafer Susceptors

    SiC Epi-Wafer Susceptors

    Semicorex SiC epi-wafer susceptors made from SiC-coated graphite are engineered to provide exceptional thermal uniformity and chemical stability in high-temperature epitaxial growth processes. Semicorex is committed to delivering the highest-quality products and the best service to customers worldwide. With strong technical expertise and reliable manufacturing capabilities, we help global partners achieve stable performance and long-term value.*
  • Related Blog
  • Reviews

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept