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The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.