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    Semicorex is a leading independently owned manufacturer of Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Silicon Carbide SiC Coated Barrel Susceptor have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Support Crucible

    Support Crucible

    Semicorex Support Crucible stands as a pivotal component within the intricate process of solar silicon crystal growth, serving as a steadfast foundation for the transformation of raw materials into high-quality silicon ingots destined for photovoltaic applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Powder

    Graphite Powder

    Semicorex Graphite Powder (99.999% purity, 1-5 µm particle size) is a high-performance material essential for semiconductor crystal growth, offering superior purity and stability. Semicorex ensures the highest quality standards, providing tailored solutions for advanced manufacturing.*
  • Semiconductor Quartz Tank

    Semiconductor Quartz Tank

    Semicorex Semiconductor Quartz Tank stands as an indispensable component within the realm of semiconductor processing, serving as a meticulously engineered vessel designed to facilitate the cleaning and treatment of delicate wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • PAN based Carbon Fiber

    PAN based Carbon Fiber

    Semicorex PAN Based Carbon Fiber Graphite Soft Felt is a lightweight, high-performance insulation material designed for use in high-temperature environments. Choose Semicorex for our commitment to delivering innovative, reliable, and tailored solutions that enhance efficiency and precision in critical applications.*
  • SiC Coated ICP Etching Carrier

    SiC Coated ICP Etching Carrier

    Semicorex SiC Coated ICP Etching Carrier engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
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  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Major ceramic components in semiconductor manufacturing

    Semiconductor equipment consists of chambers and chambers, and most ceramics are used in chambers closer to the wafers. Ceramic parts, important components widely used in the cavities of core equipment, are semiconductor equipment components manufactured through precision processing using advanced ceramic materials such as alumina ceramics, aluminum nitride ceramics, and silicon carbide ceramics.

  • Annealing

    Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

  • Taiwan's PSMC to Build 300mm Wafer Fab in Japan

    Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

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