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si wafer, As operation principle is "be market-oriented , good faith as principle, win-win as objective", holding on "customer first, quality assurance, service first" as our purpose, dedicated to offer the original quality, create excellence service , we won the praise and trust in the industry of auto parts. In the future, We are going to give quality product and excellent service in return to our customers , welcome any suggestions and feedback from all over the world.

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  • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • Silicon Carbide ICP Etching Carrier

    Silicon Carbide ICP Etching Carrier

    Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Silicon Nitride Disk

    Silicon Nitride Disk

    Semicorex Silicon Nitride Disk represents a pinnacle of material science innovation, combining the exceptional properties of silicon and nitrogen into a versatile and robust disk-shaped form. Crafted through advanced manufacturing processes, this Silicon Nitride Disk embodies high thermal stability, superior mechanical strength, remarkable wear resistance, and excellent chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Etching Ring

    Etching Ring

    The Etching Ring made of CVD SiC is an essential component in the semiconductor manufacturing process, offering exceptional performance in plasma etching environments. With its superior hardness, chemical resistance, thermal stability, and high purity, CVD SiC ensures that the etching process is precise, efficient, and reliable. By choosing Semicorex CVD SiC Etching Rings, semiconductor manufacturers can enhance the longevity of their equipment, reduce downtime, and improve the overall quality of their products.*
  • SiC Membranes

    SiC Membranes

    Semicorex SiC membranes are high-performance ceramic filtration solutions designed to meet the most demanding industrial applications with exceptional durability, chemical resistance, and thermal stability. As a leader in advanced material technology, Semicorex continues to push the boundaries of innovation, delivering superior-quality SiC membranes that set new industry standards.*
  • SiC Vacuum Chucks

    SiC Vacuum Chucks

    Semicorex SiC Vacuum Chucks are high-performance ceramic fixture designed for secure wafer adsorption in semiconductor manufacturing. With superior thermal, mechanical, and chemical properties, it ensures stability and precision in demanding process environments.*
  • Related Blog
  • Reviews

  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

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