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We've been also focusing on improving upon the stuff management and QC program to make sure that we could hold fantastic gain in the fiercely-competitive enterprise for Polycrystalline Silicon Wafer,Sic Wafer Sheet,Substrate Holder,Wafer Process,Sic Sheet Tray, Honesty is our principle, professional operation is our work, service is our goal, and customers' satisfaction is our future!
Polycrystalline Silicon Wafer, With the goal of "zero defect". To care for the environment, and social returns, care employee social responsibility as own duty. We welcome friends from all over the world to visit and guide us so that we can achieve the win-win goal together.

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    Semicorex Silicon substrate, serves as the canvas upon which intricate electronic circuits are crafted. Derived from silicon, one of the most abundant elements in the Earth's crust, this crystalline substrate forms the fundamental material for manufacturing semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

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    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

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    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

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  • Monocrystalline Silicon Manufacturing

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  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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