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High-Temperature SiC Coating for Plasma Etch Chambers

High-Temperature SiC Coating for Plasma Etch Chambers

When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.

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Product Description

At Semicorex, we understand the importance of high-quality wafer handling equipment. That's why our high-temperature SiC coating for plasma etch chambers is engineered specifically for high-temperature and harsh chemical cleaning environments. Our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
Contact us today to learn more about our High-Temperature SiC Coating for Plasma Etch Chambers.


Parameters of High-Temperature SiC Coating for Plasma Etch Chambers

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of High-Temperature SiC Coating for Plasma Etch Chambers

- Avoid peeling off and ensure coating on all surface

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.

Corrosion resistance: high hardness, dense surface and fine particles.

Corrosion resistance: acid, alkali, salt and organic reagents.

- Achieve the best laminar gas flow pattern

- Guarantee evenness of thermal profile

- Prevent any contamination or impurities diffusion





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