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ICP Plasma Etching System for PSS Process

ICP Plasma Etching System for PSS Process

Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.

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Product Description

Semicorex's ICP Plasma Etching System for PSS Process provides excellent heat and corrosion resistance for wafer handling and thin film deposition processes. Our fine SiC crystal coating offers a clean and smooth surface, ensuring optimal handling of pristine wafers.

At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our ICP plasma etching system for PSS process has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.

Contact us today to learn more about our ICP Plasma Etching System for PSS Process.


Parameters of ICP Plasma Etching System for PSS Process

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of ICP Plasma Etching System for PSS Process

- Avoid peeling off and ensure coating on all surface

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.

Corrosion resistance: high hardness, dense surface and fine particles.

Corrosion resistance: acid, alkali, salt and organic reagents.

- Achieve the best laminar gas flow pattern

- Guarantee evenness of thermal profile

- Prevent any contamination or impurities diffusion





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