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High-Temperature SiC-Coated Barrel Susceptor

High-Temperature SiC-Coated Barrel Susceptor

When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.

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Product Description

The Semicorex High-Temperature SiC-Coated Barrel Susceptor is the perfect choice for single crystal growth and other semiconductor manufacturing applications that require high heat and corrosion resistance. Its silicon carbide coating provides superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.

At Semicorex, we focus on providing high-quality, cost-effective high-temperature SiC-coated barrel susceptor, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.


Parameters of High-Temperature SiC-Coated Barrel Susceptor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of High-Temperature SiC-Coated Barrel Susceptor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.




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