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Semicorex offers high-quality thermal insulation felt and glass-like carbon coating.

Currently, the ceramic membrane products on the market primarily consist of tubular and plate-type ceramic membranes.

The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

The third generation of wide bandgap semiconductor materials, including gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AlN), exhibit excellent electrical, thermal, and acousto-optical properties. These materials address the limitations of the first and second generation of semiconductor materials, significantly advancing the semiconductor industry.

The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.