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With our excellent management, strong technical capability and strict quality control system, we continue to provide our clients with reliable quality, reasonable prices and excellent services. We aim at becoming one of your most reliable partners and earning your satisfaction for Etching Carrier,semiconductor materials supplier,cvd SiC techonology,icp etching,wafer carrier, Welcome your browsing and any your inquires,sincerely hope we are able to have chance to cooperate with you and we will build-up extensive effectively company marriage along with you.
Etching Carrier, Our company offers the full range from pre-sales to after-sales service, from product development to audit the use of maintenance, based on strong technical strength, superior product performance, reasonable prices and perfect service, we are going to continue to develop, to supply the high-quality merchandise and services, and promote lasting cooperation with our customers, common development and create a better future.

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  • ICP Plasma Etching Plate

    ICP Plasma Etching Plate

    Semicorex's ICP Plasma Etching Plate provides superior heat and corrosion resistance for wafer handling and thin film deposition processes. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • SiC Coated Graphite Base Susceptors for MOCVD

    SiC Coated Graphite Base Susceptors for MOCVD

    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • GaN-on-SiC Epitaxial Wafers Carrier

    GaN-on-SiC Epitaxial Wafers Carrier

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our GaN-on-SiC Epitaxial Wafers Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coating Flat Part

    SiC Coating Flat Part

    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • SiC Epitaxial Module

    SiC Epitaxial Module

    SiC Epitaxial Module from Semicorex combines durability, purity, and precision engineering, which is a critical component in SiC epitaxial growth. Choose Semicorex for unmatched quality in coated graphite solutions and long-term performance in demanding environments.*
  • Alumina Ceramic Arm

    Alumina Ceramic Arm

    Semicorex Alumina Ceramic Arm is a high-purity robotic component designed for precise and contamination-free wafer handling in semiconductor manufacturing. Choosing Semicorex ensures not only advanced alumina ceramic material quality but also precision craftsmanship that guarantees durability, cleanliness, and reliability in critical process environments.*
  • Related Blog
  • Reviews

  • What is isostatic graphite?

    Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • What is Dummy Wafer

    A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.

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