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SiC Graphite RTP Carrier Plate for MOCVD

SiC Graphite RTP Carrier Plate for MOCVD

Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.

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Product Description

Our SiC Graphite RTP Carrier Plate for MOCVD for MOCVD Epitaxial Growth is the perfect solution for wafer handling and epitaxial growth processing. With a smooth surface and high durability against chemical cleaning, this product ensures reliable performance in harsh deposition environments.
The material of our SiC graphite RTP carrier plate for MOCVD is engineered to prevent cracks and delamination, while the superior heat resistance and thermal uniformity ensure consistent performance for RTA, RTP, or harsh chemical cleaning.
Contact us today to learn more about our SiC Graphite RTP Carrier Plate for MOCVD.


Parameters of SiC Graphite RTP Carrier Plate for MOCVD

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Graphite RTP Carrier Plate for MOCVD

High purity SiC coated graphite
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.





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