SiC Gas Distribution Plate

In semiconductor epitaxy processes, gas flow uniformity is one of the most critical factors affecting film quality, thickness consistency, and wafer yield. The SiC Gas Distribution Plate, often referred to as a showerhead plate, is specifically engineered to distribute process gases evenly across the wafer surface while maintaining stability under extreme process conditions.

Semicorex SiC Gas Distribution Plates are designed for high-temperature silicon epitaxy reactors operating above 1400°C. Manufactured using high-purity isotropic graphite substrates and protected by a dense Chemical Vapor Deposition (CVD) silicon carbide coating, these components provide exceptional corrosion resistance, contamination control, and long-term reliability in demanding semiconductor environments.

CVD SiC Coating Technology

The core advantage of the SiC Gas Distribution Plate lies in its advanced coating technology.

A high-purity silicon carbide layer is deposited onto the surface of isotropic graphite using a Chemical Vapor Deposition (CVD) process. This coating forms a dense and highly uniform protective barrier that significantly improves component performance under aggressive process conditions.

Typical coating characteristics include:

Coating thickness: approximately 100 μm

Adjustable thickness range: 40–200 μm

High coating density

Excellent thickness uniformity

Strong adhesion to graphite substrate

Ultra-high purity surface

The CVD SiC layer effectively isolates the graphite base material from reactive process gases, dramatically improving corrosion resistance and operational lifetime.

Protecting the Graphite Substrate

Graphite is widely used in epitaxy equipment because of its excellent thermal properties and ability to withstand extreme temperatures. However, unprotected graphite is susceptible to erosion and chemical attack during long-term exposure to process gases.

As graphite degrades, it can generate particles that contaminate wafers and negatively affect device yield.

The CVD SiC coating serves multiple protective functions:

Prevents direct exposure of graphite to reactive gases

Reduces particle generation

Improves resistance to chemical etching

Extends component service life

Maintains chamber cleanliness

This protection becomes increasingly important in advanced semiconductor manufacturing, where even microscopic contamination can impact product quality.

Precision Manufacturing and Customization

Semicorex manufactures SiC Gas Distribution Plates with strict control over dimensional tolerances, coating uniformity, and hole geometry.

Customization options include:

8-inch reactor platforms

12-inch reactor platforms

Custom diameters

Customized hole patterns

Application-specific gas distribution designs

Variable coating thickness requirements

Specialized mounting features

This flexibility enables optimization for different reactor architectures and process conditions.

Applications

SiC Gas Distribution Plates are widely used in:

• Silicon epitaxy systems
• Semiconductor CVD reactors
• High-temperature deposition equipment
• Advanced wafer processing systems
• Power semiconductor manufacturing
• Compound semiconductor production

Their ability to combine gas-flow control with contamination resistance makes them a critical component in modern semiconductor fabrication.