SiC Plate for ICP Etching Process

Semicorex's SiC Plate for ICP Etching Process is the perfect solution for high-temperature and harsh chemical processing requirements in thin film deposition and wafer handling. Our product boasts superior heat resistance and even thermal uniformity, ensuring consistent epi layer thickness and resistance. With a clean and smooth surface, our high-purity SiC crystal coating provides optimal handling for pristine wafers.

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Product Description

Achieve the highest quality epitaxy and MOCVD processes with Semicorex's SiC Plate for ICP Etching Process. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. Our fine SiC crystal coating provides a clean and smooth surface, allowing for optimal handling of wafers.

Our SiC Plate for ICP Etching Process is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.

Parameters of SiC Plate for ICP Etching Process

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300