SiC Coated PSS Etching Carrier

Wafer carriers used in epixial growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex SiC Coated PSS Etching Carrier engineered specifically for these demanding epitaxy equipment applications. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Not only for thin film deposition phases such as epitaxy or MOCVD, or wafer handling processing such as etching, Semicorex supplies ultra-pure SiC Coated PSS Etching Carrier used to support wafers. In plasma etch or dry etch, this equipment, epitaxy susceptors, pancake or satellite platforms for the MOCVD, are first subjected to the deposition environment, so it has high heat and corrosion resistance. The SiC Coated PSS Etching Carrier also has a high thermal conductivity, and excellent heat distribution properties.

SiC coated PSS (Patterned Sapphire Substrate) etching carriers are used in the fabrication of LED (Light Emitting Diode) devices. The PSS etch carrier serves as a substrate for the growth of a thin film of gallium nitride (GaN) that forms the LED structure. The PSS etch carrier is then removed from the LED structure using a wet etching process, leaving behind a patterned surface that enhances the light extraction efficiency of the LED.

Parameters of SiC Coated PSS Etching Carrier

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of high purity SiC Coated PSS Etching Carrier

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.