English
Home > Products > Porous SiC

China Porous SiC Manufacturers, Suppliers, Factory

We will devote ourselves to giving our esteemed buyers using the most enthusiastically thoughtful services for Porous SiC,Porous ceramic,Silicon carbide ceramic,microporous ceramic,vacuum chuck, You would not have any communication problem with us. We sincerely welcome clients all over the world to get hold of us for organization cooperation.
Porous SiC, During the short years, we serve our clients honestly as Quality First, Integrity Prime, Delivery Timely, which has earned us an outstanding reputation and an impressive client care portfolio. Looking forward to working with you Now!

Related Products

Hot Products

  • SiN Substrates

    SiN Substrates

    Semicorex Silicon Nitride SiN substrates are high-performance materials known for their exceptional strength, thermal conductivity, and chemical stability, making them ideal for advanced semiconductor applications. Choosing Semicorex SiN substrates ensures you benefit from cutting-edge technology, rigorous quality control, and a commitment to delivering reliable, industry-leading semiconductor components.*
  • High-purity Porous Graphite Material

    High-purity Porous Graphite Material

    As the professional manufacturer, we would like to provide you High-purity Porous Graphite Material. Semicorex provide high-quality porous graphite material with customized service, we offer high specifications porous graphite. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Boat for Wafer Handling

    SiC Boat for Wafer Handling

    Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
  • 12-inch Semi-Insulating SiC Substrates

    12-inch Semi-Insulating SiC Substrates

    Semicorex 12-inch Semi-Insulating SiC Substrates are next-generation material designed for high-frequency, high-power, and high-reliability semiconductor applications. Choosing Semicorex means partnering with a trusted leader in SiC innovation, committed to delivering exceptional quality, precision engineering, and customized solutions to empower your most advanced device technologies.*
  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • CVD SiC Showerhead

    CVD SiC Showerhead

    Semicorex CVD SiC Showerhead is an essential component in modern CVD processes for achieving high-quality, uniform thin films with improved efficiency and throughput. The CVD SiC Showerhead's superior gas flow control, contribution to film quality, and long lifespan make it indispensable for demanding semiconductor manufacturing applications.**
  • Related Blog
  • Reviews

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

  • Applications of Silicon Carbide

    Among the core components of electric vehicles, automotive power modules—primarily utilizing IGBT technology—play a crucial role. These modules not only determine the key performance of the electric drive system but also account for over 40% of the cost of the motor inverter.

Related Search

Microporous SiCporous sic

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept