English
Home > Products > Glass Bottle Process

China Glass Bottle Process Manufacturers, Suppliers, Factory

Our corporation has been specializing in brand strategy. Customers' gratification is our greatest advertising. We also source OEM company for Glass Bottle Process,top plate,Take-out Tongs,Glass industry,Hot glass process, And there are quite a few international friends who came for sight seeing, or entrust us to buy other stuff for them. You might be most welcome to arrive to China, to our city also to our factory!
Glass Bottle Process, We always stick to the tenet of "sincerity, high quality, high efficiency, innovation". With years of efforts, we've got established friendly and stable business relationships with worldwide customers. We welcome any of your inquiries and concerns for our solutions, and we're sure that we are going to offer just what you want, as we always believe that your satisfaction is our success.

Related Products

Hot Products

  • Mechanical Seal for Pump

    Mechanical Seal for Pump

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Mechanical Seal for pump has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • SiC Wafer Susceptors for MOCVD

    SiC Wafer Susceptors for MOCVD

    The Semicorex SiC Wafer Susceptors for MOCVD are a paragon of precision and innovation, specifically crafted to facilitate the epitaxial deposition of semiconductor materials onto wafers. The plates’ superior material properties enable them to withstand the stringent conditions of epitaxial growth, including high temperatures and corrosive environments, making them indispensable for high-precision semiconductor manufacturing. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Susceptors for MOCVD that fuse quality with cost-efficiency.
  • Alumina Ceramic End Effector

    Alumina Ceramic End Effector

    Semicorex Alumina Ceramic End Effector is a precision-engineered component specifically designed for reliable and contamination-free wafer handling in semiconductor manufacturing and related applications.*
  • Alumina Chuck

    Alumina Chuck

    Semicorex Alumina Chuck stands as a cornerstone tool within semiconductor processing, meticulously crafted from alumina ceramics. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Electrostatic Chuck

    Electrostatic Chuck

    Semicorex Electrostatic Chuck (ESC) is an advanced component used in semiconductor manufacturing, designed to securely hold semiconductor wafers during various processing stages. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
  • Related Blog
  • Reviews

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • Silicon Carbide Ceramics and Their Diverse Fabrication Processes

    This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept