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    The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Spare Parts in Epitaxial Growth

    Spare Parts in Epitaxial Growth

    Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Chuck

    TaC Coating Chuck

    Semicorex TaC Coating Chuck, the cutting-edge vacuum chuck equipped with TaC coatings, specifically designed for semiconductor furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Pancake Susceptor for Wafer Epitaxial Process

    Pancake Susceptor for Wafer Epitaxial Process

    Semicorex pancake susceptor for wafer epitaxial process is a high purity graphite base by CVD SiC coated. Our pancake susceptor for wafer epitaxial process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC-coated Halfmoon

    TaC-coated Halfmoon

    Semicorex TaC-coated Halfmoon offers compelling advantages in the epitaxial growth of silicon carbide (SiC) for power electronics and RF applications. This material combination addresses critical challenges in SiC epitaxy, enabling higher wafer quality, improved process efficiency, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance TaC-coated Halfmoon that fuses quality with cost-efficiency.**
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  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Etching Process Parameters

    Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

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