English
Home > Products > top plate

China top plate Manufacturers, Suppliers, Factory

We usually believe that one's character decides products' high quality, the details decides products' excellent ,with the REALISTIC,EFFICIENT AND INNOVATIVE staff spirit for top plate,Take-out Tongs,Glass Bottle Process,Glass industry,Hot glass process, Welcome to speak to us should you be intrigued inside our solution, we're going to provide you with a surprice for Qulity and Price tag.
top plate, Welcome to visit our company and factory, there are various solutions displayed in our showroom that will meet your expectation, meanwhile, if you are convenient to visit our website, our sales staff will try their efforts to deliver you the best service

Related Products

Hot Products

  • Silicon Carbide Graphite Substrate MOCVD Susceptor

    Silicon Carbide Graphite Substrate MOCVD Susceptor

    Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • Wafer Cassette Carrier

    Wafer Cassette Carrier

    Semicorex high-quality Wafer Cassette Carrier, a crucial component designed for excellence in semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Boats

    SiC Wafer Boats

    Semicorex SiC Wafer Boats are advanced component meticulously designed for semiconductor manufacturing, specifically in diffusion and thermal processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • Teflon Cassette

    Teflon Cassette

    Semicorex Teflon Cassette is a high-performance carrier designed for the efficient handling and cleaning of wafers in semiconductor, photovoltaic, and electronics industries. Choose Semicorex for our reliable, durable, and cost-effective solutions that ensure optimal wafer quality and long-lasting performance throughout the manufacturing process.*
  • Graphite Electrode Rod

    Graphite Electrode Rod

    Semicorex Graphite Electrode Rods are high-purity graphite components used as core heating elements in vacuum furnaces. Choose Semicorex for unmatched material quality, precision machining, and reliable performance in high-temperature vacuum environments.*
  • Al2O3 Vacuum Chucks

    Al2O3 Vacuum Chucks

    Semicorex Al2O3 Vacuum Chucks are microporous ceramic adsorption fixture made from black alumina with a porosity of 35–40%, specifically designed for wafer handling in semiconductor applications. Choosing Semicorex means benefiting from advanced ceramic technology, precision engineering, and reliable product quality that ensure stable performance in demanding cleanroom environments.*
  • Related Blog
  • Reviews

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept