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    Semicorex Silicon Carbide Coated Barrel Susceptor is a high-quality graphite product coated with high-purity SiC, offering exceptional heat and corrosion resistance. It is specifically designed for LPE applications in the semiconductor manufacturing industry.
  • Epitaxy Component

    Epitaxy Component

    Semicorex Epitaxy Component is a crucial element in the production of high-quality SiC substrates for advanced semiconductor applications, a reliable choice for LPE reactor systems. By selecting Semicorex Epitaxy Component, customers can be confident in their investment and enhance their production capabilities in the competitive semiconductor market.*
  • SiC Inlet Rings

    SiC Inlet Rings

    Semicorex SiC Inlet Rings are high-performance silicon carbide components engineered for semiconductor processing equipment, offering exceptional thermal stability, chemical resistance, and precision machining. Choosing Semicorex means gaining access to reliable, customized, and contamination-free solutions trusted by leading semiconductor manufacturers.*
  • Porous Alumina Chucks

    Porous Alumina Chucks

    Semicorex Porous Alumina Chucks are microporous black alumina vacuum fixture with 35–40% porosity, designed to provide uniform suction and safe wafer handling in semiconductor manufacturing. Choosing Semicorex means reliable ceramic engineering, superior material quality, and consistent performance that safeguard yield and process stability.*
  • SiC Focus Ring

    SiC Focus Ring

    Semicorex SiC Focus Ring is a high-purity silicon carbide ring component designed to optimize plasma distribution and wafer process uniformity in semiconductor manufacturing. Choosing Semicorex means ensuring consistent quality, advanced material engineering, and reliable performance trusted by leading semiconductor fabs worldwide.*
  • SiC-Coated Graphite Wafer Susceptors

    SiC-Coated Graphite Wafer Susceptors

    Semicorex SiC-coated graphite wafer susceptors are the indispensable graphite wafer carriers covered with a dense and uniform CVD SiC coating, which are engineered specifically for the high-end semiconductor MOCVD epitaxial growth systems. Choosing Semicorex means that you can obtain cost-effective pricing, superior product quality, and a dependable service experience.
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  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • Coating in the thermal field of semiconductor silicon single crystals

    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

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