SiC-Coated Graphite Wafer Susceptors

Semicorex SiC-coated graphite wafer susceptors are the disc-shaped components, widely used in rotary MOCVD systems to support and heat wafers. They can facilitate uniform gas distribution and consistent heat distribution in the reaction chambers, delivering an optimal process environment for high-quality and high-efficiency epitaxial growth. Semicorex SiC-coated graphite wafer susceptors are suitable for the applications demanding excellent thin-film uniformity, such as GaN epitaxy on sapphire substrates.

Characteristics of Semicorex SiC-coated graphite wafer susceptors

Semicorex SiC-coated graphite wafer susceptors use high-purity graphite as their base material and deposit a uniform and dense silicon carbide coating on their base via chemical vapor deposition. Leveraging superior raw materials and advanced production technology, Semicorex SiC-coated graphite wafer susceptors posseess the following outstanding characteristics.

1.Exceptional thermal stability

MOCVD equipment typically operates at temperatures above 1000℃, which imposes stringent requirements on the high-temperature performance of internal components. Semicorex SiC-coated graphite wafer susceptors can well-match these harsh working conditions and operate steadily even during long-term high-temperature service. Free from coating racking or detachment, Semicorex SiC-coated graphite wafer susceptors can greatly eliminate the risk of gas and impurity release from the graphite base.

2.Strong corrosion resistance

Semicorex SiC-coated graphite wafer susceptors feature superior oxidation resistance and corrosion resistance during complex high-temperature and strong-corrosion conditions. Their CVD SiC coating can significantly prevent their base from being eroded by process gases like NH3 and H2, minimize carbon contamination release, and thereby improve the purity of epitaxial films.

3.Excellent thermal conductivity

Semicorex SiC-coated graphite wafer susceptors boast reliable thermal management capability during epitaxial growth processes because their graphite bases and CVD SiC coatings have excellent thermal conductivity. They can ensure uniform heat distribution across substrate wafers during thin-film deposition processes, resulting in high-quality epitaxial layers.