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  • Silicon Wafer Carrier

    Silicon Wafer Carrier

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Silicon Wafer Carrier for many years. Our Silicon Wafer Carrier has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • MOCVD Susceptor with TaC Coating

    MOCVD Susceptor with TaC Coating

    Semicorex MOCVD Susceptor with TaC Coating is a cutting-edge component meticulously crafted for optimum performance in semiconductor epitaxy processes within MOCVD systems. Semicorex is unwavering in our commitment to delivering superior products at highly competitive prices. We are eager to establish a lasting partnership with you in China.*
  • AlN Ceramic Crucible

    AlN Ceramic Crucible

    Designed to withstand extreme conditions, the AlN Ceramic Crucible presented by Semicorex is an indispensable tool for professionals working with non-ferrous metals and semiconductor materials like gallium arsenide.
  • Robot End Effector

    Robot End Effector

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Robot End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Ceramic Wafer Boat

    SiC Ceramic Wafer Boat

    Semicorex SiC Ceramic Wafer Boat has emerged as a critical enabling technology, providing an unwavering platform for high-temperature processing while safeguarding wafer integrity and ensuring the purity required for high-performance devices. It’s tailored to the semiconductor and photovoltaic industries that are built on precision. Every aspect of wafer processing, from deposition to diffusion, demands meticulous control and pristine environments. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Wafer Boat that fuses quality with cost-efficiency.**
  • Silicon Carbide Coated Barrel Susceptor

    Silicon Carbide Coated Barrel Susceptor

    Semicorex Silicon Carbide Coated Barrel Susceptor is a high-quality graphite product coated with high-purity SiC, offering exceptional heat and corrosion resistance. It is specifically designed for LPE applications in the semiconductor manufacturing industry.
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  • Precision ceramic components in semiconductor

    Precision ceramic parts are key components of core equipment in key processes of semiconductor manufacturing, such as photolithography, etching, thin film deposition, ion implantation, CMP, etc., such as bearings, guide rails, liners, electrostatic chucks, mechanical handling arms, etc.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

    Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

  • Japan recently restricted exports of 23 types of semiconductor manufacturing equipment

    Japan recently restricted exports of 23 types of semiconductor manufacturing equipment. The announcement has sent ripples across the industry, as the move is expected to have a significant impact on global supply chains for semiconductor manufacturing.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

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