Silicon Carbide-Coated Graphite Barrel

The Semicorex Silicon Carbide-Coated Graphite Barrel is the perfect choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in LPE processes and other high-temperature environments.

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Product Description

When it comes to semiconductor manufacturing, the Semicorex Silicon Carbide-Coated Graphite Barrel is the top choice for exceptional performance and reliability. Its high-quality SiC coating and superior density and thermal conductivity provide superior heat distribution and protection in even the most challenging high-temperature and corrosive environments.

Our Silicon Carbide-Coated Graphite Barrel ensure an even thermal profile, guaranteeing the best laminar gas flow pattern. It prevents any contamination or impurities from diffusing into the wafer, making it ideal for use in cleanroom environments. Semicorex is a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China, and our products have a good price advantage. We look forward to becoming your long-term partner in the semiconductor industry.

Parameters of Silicon Carbide-Coated Graphite Barrel

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Silicon Carbide-Coated Graphite Barrel

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.