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  • MOCVD SiC Coated Graphite Susceptor

    MOCVD SiC Coated Graphite Susceptor

    Semicorex MOCVD SiC Coated Graphite Susceptor is an advanced and specialized component used in the Metal-Organic Chemical Vapor Deposition process, a crucial technique in the production of semiconductors, optoelectronic devices, and other advanced materials. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Electrostatic Chuck

    Electrostatic Chuck

    Semicorex Electrostatic Chuck (ESC) is an advanced component used in semiconductor manufacturing, designed to securely hold semiconductor wafers during various processing stages. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
  • LNOI Wafer

    LNOI Wafer

    Semicorex LNOI Wafer: High-performance Lithium Niobate on Insulator wafers with customizable substrates for advanced photonics and RF applications. With precision engineering, customizable options, and superior material quality, Semicorex ensures high-performance LNOI wafers tailored to your application needs.*
  • Tantalum Carbide Coating Chuck

    Tantalum Carbide Coating Chuck

    Semicorex Tantalum Carbide Coating Chuck is a precision-engineered component designed for use in high-temperature and high-stress environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Nitride Roller

    Silicon Nitride Roller

    The Silicon Nitride Roller, presented by Semicorex, is crafted from gas pressure sintered silicon nitride (Si3N4), a high-performance ceramic material.
  • Graphite Insulation Plate

    Graphite Insulation Plate

    Semicorex Graphite Insulation Plate's unique combination of properties makes it a versatile and indispensable material across a broad spectrum of industries.
  • Related Blog
  • Reviews

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • GaN Market Changes

    Silicon carbide (SiC) is currently facing challenges in the "price war," while gallium nitride (GaN) is emerging as a key player in the next technological battlefield.

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