8 inch EPI Bottom Ring

Semicorex 8 inch EPI Bottom Ring is an important structural part that is used for semiconductor epitaxy equipment and is specifically designed to be the bottom ring of the complete susceptor assembly. The bottom ring supports the wafer carrier system during epitaxial growth of the wafer while contributing mechaniska stability, thermal uniformity, and process integrity which are needed to manufacture high performance semiconductor wafers. The Bottom Ring is manufactured from high-purity graphite which has been coated, at the surface level, with a dense and uniform coating of silicon carbide (SiC). As a result, it represents a highly reliable alternative for advanced epitaxial reactors under extreme thermal and chemical conditions.

Graphite is the most appropriate base material for the Bottom Ring due to its light weight, excellent thermal conductor, and non-complex construction with tangential and vertical dimensions stability under high temperature. These properties permit the Bottom Ring to cycle thermally at speed and, therefore demonstrate consistent continuity in mechanical performance while in service. The SiC outer coating is applied using a chemical vapor deposition (CVD) process to manufacture a dense and defect-free ceramic outer layer. In addition, the CVD process provides a process that limits wear and particle generation by handling the SiC coating with care not to disturb the underlying substrate graphite. As an amalgamation of SiC and graphite, the SiC surface layer is chemically inert to the corrosive action of process gases, especially with hydrogen and chlorinated byproducts, and has both excellent hardness and wear resistance - ensuring as much support to the wafer carrier system as possible while in use.

The 8 inch EPI Bottom Ring is made for compatibility with most horizontal or vertical MOCVD and CVD epitaxial tools that deposit silicon, silicon carbide or compound semiconductors. The optimized geometry is designed to fit the susceptor and top components of the wafer holder system with precise alignment, universal heat distribution and stability in wafer rotation. The excellent flatness and concentricity of the ring attribute to importing epitaxial layer uniformity and minimizing defects on the wafer surface.

One of the advantages of this SiC coated graphite ring is the low particle emission behavior which minimizes contamination of the wafer while in processing. The SiC layer lowers out-gassing and generation of carbon particles as compared to un-coated graphite components to achieve clean chamber environments and higher yield rates. In addition, the excellent thermal shock resistance of the composite structure prolongs the life of the product, reduces replacement and lower operation costs for semiconductor manufacturers.

All Bottom Rings are dimensionally checked, surface quality checked, and thermal cycle tested to ensure they meet the significant environmental needs of a semiconductor manufacture's environment. Additionally, the SiC surface coating thickness is more than adequate for mechanical and thermal potential compatibility; SiC coatings are routinely examined for adhesion factors ensuring that peeling or flaking does not occur when the bottom rings are exposed to high temperature deposition. The Flat Bottom Ring can be customized with few minor dimensional and coating property variations for individual reactor design and process applications.

The Semicorex 8 inch EPI Bottom Ring from Semicorex offers an excellent balance of strength, chemical resistance, and favorable thermal characteristics for epitaxial growth systems. Due to the known benefits of SiC coated graphite, this bottom ring provides higher wafer quality, lower contamination probability, and longer service life in any high temperature deposition process. This bottom ring has been engineered for use with Si, SiC, or III-V material epitaxial growth; it is made to offer reliable, repeatable comfort in the production of demanding semiconductor material.